MJD31B/31c mjd32b/32c complementary silicon power transistors n stmicroelectronics preferred salestypes n surface-mounting to-252 (dpak) power package in tape & reel (suffix "t4") n electrically similar to tip31b/c and tip32b/c applications n general purpose switching and amplifier transistors description the MJD31B and mjd31c and the mjd32b and mjd32c form complementary npn-pnp pairs. they are manufactured using epitaxial base technology for cost-effective performance. ? internal schematic diagram may 1999 1 3 dpak to-252 (suffix "t4") absolute maximum ratings symbol parameter value unit npn MJD31B mjd31c pnp mjd32b mjd32c v cbo collector-base voltage (i e = 0) 80 100 v v ceo collector-emitter voltage (i b = 0) 80 100 v v ebo emitter-base voltage (i c = 0) 5 v i c collector current 3 a i cm collector peak current 5 a i b base current 1 a p tot total dissipation at t c = 25 o c15w t stg storage temperature -65 to 150 o c t j max. operating junction temperature 150 o c for pnp types the values are intented negat ive. 1/5
thermal data r thj-case r thj-amb thermal resistance junction-case max thermal resistance junction-ambient max 8.33 100 o c/w o c/w electrical characteristics (t case = 25 o c unless otherwise specified) symbol parameter test conditions min. typ. max. unit i ces collector cut-off current (v be = 0) v ce = max rating 20 m a i ceo collector cut-off current (i b = 0) v ce = 60 v 50 m a i ebo emitter cut-off current (i c = 0) v eb = 5 v 0.1 ma v ceo(sus) collector-emitter sustaining voltage i c = 30 ma for MJD31B/32b for mjd31c/32c 80 100 v v v ce(sat) * collector-emitter saturation voltage i c = 3 a i b = 375 ma 1.2 v v be(on) * base-emitter voltage i c = 3 a v ce = 4 v 1.8 v h fe * dc current gain i c = 1 a v ce = 4 v i c = 3 a v ce = 4 v 25 10 50 h fe dynamic current gain i c = 0.5 a v ce = 10 v f = 1 khz i c = 0.5 a v ce = 10 v f = 1 mhz 20 3 * pulsed: pulse duration = 300 m s, duty cycle 2 % for pnp type voltage and current values are negat ive. safe operating area derating curves MJD31B/31c - mjd32b/32c 2/5
dc current gain (npn type) collector-emitter saturation voltage (npn type) base-emitter saturation voltage (npn type) dc current gain (pnp type) collector-emitter saturation voltage (pnp type) collector-base capacitance (pnp type) MJD31B/31c - mjd32b/32c 3/5
dim. mm inch min. typ. max. min. typ. max. a 2.20 2.40 0.087 0.094 a1 0.90 1.10 0.035 0.043 a2 0.03 0.23 0.001 0.009 b 0.64 0.90 0.025 0.035 b2 5.20 5.40 0.204 0.213 c 0.45 0.60 0.018 0.024 c2 0.48 0.60 0.019 0.024 d 6.00 6.20 0.236 0.244 e 6.40 6.60 0.252 0.260 g 4.40 4.60 0.173 0.181 h 9.35 10.10 0.368 0.398 l2 0.8 0.031 l4 0.60 1.00 0.024 0.039 v2 0 o 8 o 0 o 0 o p032p_b to-252 (dpak) mechanical data MJD31B/31c - mjd32b/32c 4/5
information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsib ility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectroni cs. specifi cation mentio ned in this publication are subject to change without notice. this publication supersedes and replaces all in formation previou sly supplied. stmicroe lectron ics products are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectron ics. the st logo is a trademark of stmicroelectronics ? 1999 stmicroelectronics C pr inted in italy C all rights reserved stmicroelectronics group of companies australia - brazil - canada - china - france - germany - italy - japan - korea - malaysia - malta - mexico - morocco - the neth erlands - singapore - spain - sweden - switzerland - t aiwan - thailand - united kingdom - u.s.a. http://www.st.com . MJD31B/31c - mjd32b/32c 5/5
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